Overview of N type Bismuth telluride doped Selenium 99% CAS No. 1304-82-1 semiconductor materials Bi2Te2.7Se0.3 powder
Telluride and selenide compounds play a significant role in the field of semiconductors, particularly in the development of advanced electronic and optoelectronic devices. These materials belong to the chalcogenide family, characterized by their ability to form compounds with elements from groups IV-VI in the periodic table.
Tellurides: Compounds containing tellurium (Te) as the chalcogen. Examples include cadmium telluride (CdTe), mercury telluride (HgTe), and zinc telluride (ZnTe). These materials have found applications in solar cells, infrared detectors, and high-speed electronics due to their tunable bandgap, high electron mobility, and good thermal stability.
Selenides: Similar to tellurides, but with selenium (Se) replacing tellurium. Notable examples are cadmium selenide (CdSe), gallium selenide (GaSe), and zinc selenide (ZnSe). Selenide compounds are widely used in light-emitting diodes (LEDs), laser diodes, and solar cells due to their direct bandgap properties and efficient light absorption/emission capabilities.
Feature of N type Bismuth telluride doped Selenium 99% CAS No. 1304-82-1 semiconductor materials Bi2Te2.7Se0.3 powder
Direct Bandgap: Many telluride and selenide semiconductors have direct bandgaps, which facilitate efficient light emission and absorption processes. This makes them suitable for optoelectronic applications such as LEDs and lasers.
Tunable Bandgap: The bandgap of these materials can be adjusted by alloying or altering the composition (e.g., CdSe to CdTe), enabling customization for specific device requirements across a wide spectrum of wavelengths.
High Electron Mobility: Materials like HgCdTe exhibit high electron mobility, which is crucial for high-speed electronic devices and low-noise detector applications.
Thermal Stability: Some tellurides and selenides, like ZnTe and ZnSe, demonstrate good thermal stability, making them suitable for high-temperature operation and processing.
Non-Toxic Alternatives: With increasing environmental concerns, there’s a push towards exploring less toxic alternatives to commonly used semiconductors. For instance, Cd-based tellurides and selenides are being replaced or combined with less toxic elements like Mg or Mn in some applications.
(N type Bismuth telluride doped Selenium 99% CAS No. 1304-82-1 semiconductor materials Bi2Te2.7Se0.3 powder)
Parameters of N type Bismuth telluride doped Selenium 99% CAS No. 1304-82-1 semiconductor materials Bi2Te2.7Se0.3 powder
Bismuth Telluride (Bi2Te3) doped with Selenium (Se) is a fascinating and technologically advanced semiconductor material, primarily used in the development of thin-film solar cells, thermoelectric generators, and various electronic devices due to its unique properties. The chemical formula for this compound is Bi2Te2.7Se0.3, indicating that it consists of a mixture of bismuth telluride and selenium with a slight Se content, typically around 3%. Selenium doping enhances the material’s performance by improving its electrical conductivity and thermoelectric efficiency.
CAS Number 1304-82-1 is the specific identifier assigned by the Chemical Abstracts Service (CAS) to this compound, ensuring its unambiguous identification within the scientific community. This number serves as a universal reference for tracking chemical compounds and their properties.
The key characteristics of N-type Bi2Te2.7Se0.3 powder include:
1. Crystal structure: It crystallizes in a rhombohedral crystal system, forming a layered structure with alternating layers of bismuth, tellurium, and selenium atoms. This arrangement gives rise to its high thermoelectric performance.
2. Bandgap: The doped material has an indirect bandgap, which means that charge carriers (electrons and holes) need to interact with phonons for efficient energy conversion. Selenium doping helps to narrow the bandgap, making it more suitable for certain applications like photovoltaics.
3. Electrical conductivity: N-type doping introduces free electrons, increasing the material’s electrical conductivity. Selenium’s addition enhances this property, as it can donate electrons to the crystal lattice, thus improving the material’s overall conductivity.
4. Thermoelectric properties: The combination of high electrical conductivity and a relatively low thermal conductivity makes Bi2Te2.7Se0.3 an excellent thermoelectric material. When a temperature gradient is applied, it generates a voltage difference, which is the basis for thermoelectric generators.
5. Stability: Although selenium doping can enhance performance, it is essential to maintain the stability of the material under operating conditions. The 99% purity of selenium ensures minimal impurities that could degrade the material’s performance over time.
6. Processing: The powder form of Bi2Te2.7Se0.3 allows for easy fabrication into thin films or bulk materials through techniques like sintering, chemical vapor deposition, or molecular beam epitaxy, enabling the creation of devices with desired microstructure and properties.
In summary, Bi2Te2.7Se0.3, a N-type doped semiconductor with a CAS Number 1304-82-1, exhibits exceptional thermoelectric and electronic properties, making it a valuable material in modern technology. Its high purity and tunable properties make it an attractive choice for various applications, from renewable energy generation to advanced electronic devices. Further research and optimization of dopant concentration can lead to even more improved performance in the future.
(N type Bismuth telluride doped Selenium 99% CAS No. 1304-82-1 semiconductor materials Bi2Te2.7Se0.3 powder)
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