Overview of High Purity CAS 12034-77-4 Niobium Selenide NbSe2 Powder
Telluride and selenide compounds play a significant role in the field of semiconductors, particularly in the development of advanced electronic and optoelectronic devices. These materials belong to the chalcogenide family, characterized by their ability to form compounds with elements from groups IV-VI in the periodic table.
Tellurides: Compounds containing tellurium (Te) as the chalcogen. Examples include cadmium telluride (CdTe), mercury telluride (HgTe), and zinc telluride (ZnTe). These materials have found applications in solar cells, infrared detectors, and high-speed electronics due to their tunable bandgap, high electron mobility, and good thermal stability.
Selenides: Similar to tellurides, but with selenium (Se) replacing tellurium. Notable examples are cadmium selenide (CdSe), gallium selenide (GaSe), and zinc selenide (ZnSe). Selenide compounds are widely used in light-emitting diodes (LEDs), laser diodes, and solar cells due to their direct bandgap properties and efficient light absorption/emission capabilities.
Feature of High Purity CAS 12034-77-4 Niobium Selenide NbSe2 Powder
Direct Bandgap: Many telluride and selenide semiconductors have direct bandgaps, which facilitate efficient light emission and absorption processes. This makes them suitable for optoelectronic applications such as LEDs and lasers.
Tunable Bandgap: The bandgap of these materials can be adjusted by alloying or altering the composition (e.g., CdSe to CdTe), enabling customization for specific device requirements across a wide spectrum of wavelengths.
High Electron Mobility: Materials like HgCdTe exhibit high electron mobility, which is crucial for high-speed electronic devices and low-noise detector applications.
Thermal Stability: Some tellurides and selenides, like ZnTe and ZnSe, demonstrate good thermal stability, making them suitable for high-temperature operation and processing.
Non-Toxic Alternatives: With increasing environmental concerns, there’s a push towards exploring less toxic alternatives to commonly used semiconductors. For instance, Cd-based tellurides and selenides are being replaced or combined with less toxic elements like Mg or Mn in some applications.
(High Purity CAS 12034-77-4 Niobium Selenide NbSe2 Powder)
Parameters of High Purity CAS 12034-77-4 Niobium Selenide NbSe2 Powder
Niobium Selenide (NbSe2), with the Chemical Abstracts Service (CAS) number 12034-77-4, is a fascinating inorganic compound that holds significant importance in various scientific and industrial applications. This material is a layered transition metal dichalcogenide, consisting of niobium (Nb) atoms sandwiched between selenium (Se) layers, forming a hexagonal crystal structure.
The high purity of NbSe2 powder is a crucial aspect, as it directly impacts its performance and reliability in different applications. Purity levels above 99.9% are typically sought after, ensuring minimal impurities that could potentially degrade its electronic properties or introduce unwanted side reactions. High purity NbSe2 is synthesized through controlled chemical processes, such as vapor deposition, hydrothermal synthesis, or chemical vapor transport, to achieve the desired level of crystallinity and homogeneity.
In terms of physical properties, NbSe2 is a semiconductor, with an indirect bandgap around 0.35 eV at room temperature. Its electrical conductivity can be tuned by applying external pressure or by introducing dopants, making it a versatile material for electronic devices like thermoelectric generators, sensors, and superconducting elements. The layered nature of the compound allows for easy exfoliation into two-dimensional (2D) nanosheets, which have attracted considerable attention in the field of nanotechnology due to their potential for novel electronic and optoelectronic properties.
Mechanically, NbSe2 exhibits excellent thermal stability and mechanical strength, which are essential for applications in high-temperature environments. It has a melting point of around 1,050°C, making it suitable for use in various harsh conditions. Moreover, the compound’s lattice parameters, such as the a-axis and c-axis lengths, play a vital role in determining its electronic properties and are typically within the range of 3.3 to 3.4 Å and 16.4 to 16.8 Å, respectively.
Chemically, NbSe2 is relatively inert, but it can react with certain elements or compounds under specific conditions. However, its resistance to corrosion and compatibility with various substrates make it an attractive candidate for surface coatings or composite materials. Its ability to form heterostructures with other materials, like graphene or transition metal dichalcogenides, opens up possibilities for creating novel heterojunction devices.
In summary, Niobium Selenide (CAS 12034-77-4) is a high purity compound with exceptional properties, making it a valuable material in numerous scientific and industrial sectors. Its layered structure, tunable electronic properties, thermal stability, and chemical inertness make it suitable for applications in electronics, energy conversion, and even aerospace engineering. Ongoing research continues to explore new ways to harness the unique characteristics of NbSe2, driving innovation across a wide range of technologies.
(High Purity CAS 12034-77-4 Niobium Selenide NbSe2 Powder)
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